CMM-H (CXL Memory Module, H: Hybrid)
Industry 1st CXL-based Storage
SSD that combines the benefit of
Storage and DRAM memory
Leveraging Compute Express Link(CXL) interconnect technology & offering CMM-H PMEM(Persistent Memory) option, CMM-H helps us to achieve high bandwidth read/write and low latency. CMM-H PMEM (Persistent Memory) option supports existing software written for NVDIMM (Non-volatile Dual In-line Memory Module) with built-in DRAM and NAND flash.
CMM-H Architecture
Dual Mode Support
Persistent Memory Mode
20X improvement in speed and latency
When used in AI & ML applications, CMM-H can have up to 20X* performance improvement by increasing a random read speed and decreasing a latency. This can be achieve by implementation of Samsung’s industry first Compute Express Link (CXL) interconnection technology & built-in DRAM cache technology.
* 20x better performance compared to using PCIe Gen4 NVMe SSD. MS-SSD
Ideal memory solution for AI & ML Workload
Efficient AI recommendation System
* Results based on publicly available DLRM workload traces from Meta and FPGA based PoC CMM-H
**PCIe Gen4 NVMe SSD (Random 4KB read(0.9MIOPS) for 100% hit rate vs MS-SSD 64B read Performance (42.9MIOPS)
Webinar: CMM-H Samsung's CXL-based SSD for the Memory-Centric Computing Era
Better System TCO*
Small granularity data access, Large memory capacity
*Total Cost of Ownership
Persistent Memory
Battery-backed DRAM with Speed. Supports flush-on fail with CXL 2.0 GPF Feature
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Memory Solutions Lab
Transforming Memory Performance
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